抗核辐照功率晶体管GAT优化设计的必要条件

The Prerequisite for the Optimal Designing of Nucleus Radiation resistant Power Transistor GAT

通过关于电力半导体器件 GAT的集电结耗尽层电位分布和电场分布的二维解析模型定量研究了优化设计 GAT的工艺参数和结构参数的关系 ,即抗核辐照器件

By the aid of the two dimensional analytical model of the electric potential and field distribution in power semiconductor device GAT′s collector depletion space in the cut off state, which was established by the writers lately, the GAT′s optimal designing relations among the parameters of process and structure,i.e. the prerequisite for the optimal designing of nucleus radiation resistant device GAT, was investigated quantitatively.