采用DOE方法优化非晶硅溅射工艺

The Process of Amorphous Silicon with Sputtering Using DOE Method

文中通过使用DOE实验设计方法对磁控溅射设备a-Si靶工艺特性进行能力研究,给出了该设备工艺随功率、压力、温度的设定条件下a-Si介质生长速率与均匀性的变化关系。结果表明,功率和压力是主要决定速率和均匀性的关键因素,基片温度从室温到300℃,a-Si淀积速率基本不变。降低工艺压力对改善均匀性最为明显;工艺温度和功率的降低虽也可以起到改善均匀性的作用,但效果不明显,且三者的变动同时会导致速率的变化,为今后的生产、开发应用提供了参考意见。

This material studies sputter amorphous Silicon process character in DOE mode and a-Si Deposition rate and uniformity varies with power, pressure and temperature. The experiment result show that power and pressure is critical factor for Deposition rate and uniformity, The deposition rate will hold the line with temperature ramp from room temperature to 300~C. The decrease of Pressure can improve uniformity in evidence. The decrease of temperature and power can improve uniformity too, but inconspicuous. The a-Si deposition rate will change with these three factors tuning. The material prepares the guidelines for manufacture and exploitation.