摘要
采用溶胶-凝胶(Sol-gel)法制备1 mol%Tm3+、1 mol%Tm3+和10 mol%Yb3+共掺杂Y2Ti2O7粉末。Tm3+掺杂Y2Ti2O7为Y2Ti2O7相和微量TiO2相的混合结构,Yb3+共掺杂不改变Tm3+掺杂Y2Ti2O7相结构。在976 nm半导体激光器(LD)激发下,在430~500 nm和620~750 nm波长范围内获得了蓝色和红外上转换发光,分别对应于Tm3+的1G4→3H6和3H4→3H6跃迁。Yb3+共掺杂显著提高了Tm3+掺杂Y2Ti2O7的上转换发光强度。研究表明:随着LD激发电压增大,Tm3+-Yb3+共掺杂Y2Ti2O7上转换发光强度逐渐增大,且上转换发光强度随LD激发功率增大呈现两阶段变化规律;随着温度升高,Tm3+-Yb3+共掺杂Y2Ti2O7上转换发光强度逐渐降低,这是由无辐射弛豫速率随着温度升高而增加所致。
The 1 mol% Tin^3+, 1 mol% Tm^3+ and 10 tool% Yb^3+ co -doped Y2Ti2O7 powders were prepared by sol- gel method. The Tm^3+ doped Y2Ti2O7 was composed of mixture of Y2Ti2O7 and tiny TiO2 phases. Yb^3+ co - doping had no effect on the phase structure of Tm^3+ doped Y2Ti2O7. The blue and infrared up -conversion emissions in the wavelength range of 430 - 500 nm and 620 - 750 nm were detected by a 980 - nm semiconductor laser diode (LD) excitation, which corresponding to the ^1G4→^3H6 and ^3H4→^3H6 transitions of Tm^3+. The up -conversion emissions intensity of Tm^3+ doped Y2Ti2O7 powders was enhanced by Yb^3+ co -doping. The up -conversion emissions intensity of Tm^3+ -Yb^3+ co -doped Y2Ti2O7 increased gradually with increasing the excitation voltage of LD. The two step process was observed for the up - conversion emission intensity with increasing the excitation power of LD. The up - conversion emissions intensity of Tm^3+ -Yb^3+ co- doped Y2Ti2O7 was decreased with increasing the temperature, which caused by the increase of rate of nonradiative relaxation rate with temperature.
出处
《大连民族学院学报》
CAS
2012年第3期235-238,共4页
Journal of Dalian Nationalities University
基金
国家自然科学基金项目(11004021)
中国博士后科学基金项目(2011M500623)
大连市科学技术基金(2011J21DW021)
中央高校基本科研业务费专项资金资助项目(DC10040122)