摘要
Because of its very low light extraction efficiency(LEE),LED is limited to be widely used under the condition of the internal quantum efficiency which up to 90%.In order to fullfill the design of a more efficient GaN-based blue light LED,the model including deeply etched surface photonic crystals(PhCs)LED is discussed using mode analysis method from light waveguide theory.The distributions of all order modes in GaN layer are obtained by the effective index approximation.The light extraction efficiencies are also calculated by finite-difference time-domain method(FDTD).The emulated results fully coincide with the former analysis.Because the manufacture of the surface photonic crystal is feasible,the work can be very meaningful to design and manufacture the high efficiency GaN-based blue light LED in factory for a large amount.
Because of its very low light extraction efficiency （LEE）, LED is limited to be widely used under the condition of the internal quantum efficiency which up to 90%. In order to fullfill the design of a more efficient GaN-based blue light LED, the model including deeply etched surface photonic crystals （PhCs） LED is discussed using mode analysis method from light waveguide theory. The distributions of all order modes in GaN layer are obtained by the effective index approximation. The light extraction efficiencies are also calculated by finite-difference time-domain method （FDTD）. The emulated results fully coincide with the former analysis. Because the manufacture of the surface photonic crystal is feasible, the work can be very meaningful to design and manufacture the high efficiency GaN-based blue light LED in factory for a large amount.
基金
National Natural Science Foundation of China(No.61071087)
Reward Fund of Outstanding Youth and Middle Age Scientist of Shandong Province(No.BS2009N5002)
