GaAs双光子诱导光吸收对调Q激光器脉冲的影响

Effects of Two-photon Induced Light Absorption of GaAs on Laser Emission

研究了利用 ＧａＡｓ的双光子诱导吸收实现调Ｑ激光脉冲展宽的原理，分析了 ＧａＡｓ的光吸收特性，建立了激光器速率方程并给出了数值解．在实验上，将 ＧａＡｓ薄片放入一电光调ＱＮｄ：ＹＡＧ激光器谐振腔中，同理论预测一样，激光输出脉冲的能量、峰值功率都低于常规调Ｑ激光脉冲，同时脉冲宽度得到了展宽．

We have demonstrated the theory of utilizing internal two-photon-induced light absorption of semiconductor GaAs to accomplish Q-switched pulse lengthen- ing.The rate equations are solved and the experiments are performed with an electrooptic Q-switching Nd:YAG laser with a GaAs sample in its cavity. As pre- dicted by the theory that the output intensity and output energy both decrease and pulse length increases as compared with the normal Q-switched case. We were able to obtain pulses as long as 1μs.