蓝宝石/氮化铝衬底上SiC外延薄膜的X射线衍射分析

Analysis of the SiC thin film epitaxy on the sapphire/AlN compound substrate by X ray diffraction

介绍了在蓝宝石 /氮化铝复合衬底上外延生长碳化硅薄膜材料的工艺技术 .通过在蓝宝石衬底上预淀积一层薄的氮化铝缓冲层使碳化硅薄膜的成核和黏附性得到很大的改善 .用多种X光衍射方法对生长在蓝宝石 /氮化铝复合衬底上的碳化硅薄膜的结构进行了分析 ,结果表明 ,可在这种衬底上成功地生长出 6H SiC单晶薄膜 .

The AlN coated sapphire has been developed as a compound substrate for SiC thin film epitaxy. By predepositing a thin AlN buffer layer, the nucleation and adherence of the SiC film are greatly improved. Structures of the thin films grown on the sapphire/AlN compound substrates are analyzed by varied methods of X ray diffraction. Measurement results show that single crystal 6H SiC thin films can be successfully grown on these compound substrates.