GaN的RBS/沟道、X射线双晶衍射和光致发光谱

Rutherford Backscattering and Channeling,Double Crystal X\|ray Diffraction and Photoluminescence of GaN

采用卢瑟福背散射及沟道效应、X射线双晶衍射和光致发光谱三种技术对两类未故意掺杂的 MOVPE生长的 Ga N样品进行综合测试 .它们在表征 Ga

Rutherford Backscattering and Channeling\,double crystal X\|ray diffraction\,photoluminescence technique are used to study the quality of undoped GaN layers grown by organometallic vapor phase epitaxy on Al\-2O\-3 substrates.The results show that they have good agreements with each other in characterizing the quality of GaN films.