摘要
提出了深亚微米 SOI GCHT电流模型 .不同于普通 MOSFET短沟模型的处理 ,计及受栅电压及基极电压同时控制的可动电荷的影响 ,采用准二维分析及抛物线近似 ,求出沟道长度及漏端电压对源端表面势的影响 ,较好地反映了电荷共享效应及 DIBL效应 ,并定量计算出与漏电压和栅电压同时相关的动态阈值电压漂移量 .模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等 .该模型具有清晰的物理意义 ,从理论上解释了 GCHT具有较小的短沟效应及较高的阈值电压稳定性等物理现象 .模型计算结果与数值模拟及实验结果吻合良好 ,较好地描述了短沟 GCHT的物理特性 .
An analytical model for the SOI deep\|submicrometer gate controlled hybrid transistor (GCHT), which exhibits dynamic threshold voltage, is presented for the first time in this paper. Unlike the models of conventional short\|channel MOSFET, this model takes account of the mobile charges controlled by the gate voltage and the base voltage for a quasi\|two\|dimensional analysis of the potential distribution. Based on this model and the parabolic approximation, the surface potential is obtained, which is affected by the channel length and the drain voltage. The dynamic threshold voltage shift of the hybrid transistor is figured out, with the charge sharing effect and DIBL effect being considered. In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect. The improved short\|channel effect and a better threshold voltage stability of GCHT can be explained explicitly by this model. And the model predictions agrees with the numerical simulated results and experimental data very well in this model.
关键词
栅控混合管
电流解析模型
SOI
深亚微米
gate controlled hybrid transistor (GCHT)
analytical model
SOI
submicrometer
