摘要
研究了极细沟道 NMOSFET器件的随机电报信号噪声 ( RTS)的特征 .首次在室温下观测到了大幅度 (大于 60 % )的 RTS,发现当器件工作在弱反型区时 ,RTS幅度基本与温度和栅压无关 .对 RTS的动力学机制的分析及数值模拟表明 ,载流子数涨落与迁移率涨落引起的 RTS的幅度随着沟道宽度的减小而增加 ,当沟道宽度减小至 40 nm以下时 ,由荷电陷阱对沟道载流子散射而产生的迁移率涨落对细沟道中 RTS幅度的影响起主导作用 .
Random telegraph signals (RTSs) in NMOSFETs with ultra narrow channels was investigated. RTS with large amplitude (>60%) has been observed at room temperature for the first time. The amplitude of RTS is almost independent of the measuring temperature and gate bias when the device is operated in a weak inversion. The observations suggest that the amplitude of RTSs caused by mobility fluctuation and carrier number fluctuation will increase with the reduction of the channel width. Furthermore,the numerical simulation proves that the mobility fluctuation of carriers plays a predominant role when the channel width is below 40nm.
基金
国家自然科学基金资助课题!( 1 9974 0 3 3 )
