SiC单片集成电路工艺技术

Study of the Silicon Carbide integrate circuits technique

对宽禁带半导体材料碳化硅的异质外延技术以及碳化硅集成电路单项工艺技术进行了讨论 ,比较了不同的工艺对集成电路制造的影响 .介绍了工作于 5V电压下的碳化硅数字互补型金属氧化物半导体集成电路工艺技术 .

The technique about the heteroepitaxial growth of wide bandgap material Carbon Silicon (SiC) thin films and SiC integrate circuits are discussed. Different techniques are compared in their power supply.