摘要
设计了一种针对基准电压输出非线性的分段温度补偿电压基准源。该电路在基准源工作的低温和高温阶段对输出进行温度补偿,实现低温度系数。利用高增益的两级运算放大器以及增加PMOS管的栅长来提高电路的电源抑制比(PSRR)。在-55℃~125℃范围内,温度系数为2.9×10-6/℃,低频电源抑制比为-71dB。
A new piecewise curvature compensated voltage reference drcuit was designed to solve the problem of non- linear output of bandgap reference. In this circuit, compensation was made at low and high operating temperatures, respec tively, to achieve low temperature coefficient. A high gain 2-stage operational amplifier and PMOSFET with extended gate were used to improve PSRR. Simulation results showed that the circuit achieved a temperature coefficient of 2. 9 ×106℃ over the temperature range from -55℃ to 125℃, and a PSRR of 71 dB at low frmuencv.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第3期340-343,共4页
Microelectronics
关键词
带隙基准源
分段曲率补偿
温度系数
电源抑制比
Bandgap reference source
Piecewise curvature compensation
Temperature coefficient
PSRR