摘要
提出一种内部集成过温保护功能的VDMOS器件。对传统过温保护原理进行了分析,在此基础上,提出了一种适用于功率器件过温保护的改进电路结构。仿真结果表明,该器件在温度超过174℃时实现自关断,在温度降回142℃时实现自重启。该温度迟滞功能可有效防止热振荡。
A vertical double-diffusion MOSFET （VDMOS） integrated with over-temperature protection function was proposed. Mechanism of over-temperature protection was analyzed, and an improved over-temperature protec- tion circuit was presented for power device. Simulation results showed that the proposed device could be turned off at 174 ℃ and restart at 142℃. This thermal hysteresis function could effectively prevent the device from thermal oscillation.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第3期352-355,共4页
Microelectronics
关键词
VDMOS
过热保护
可靠性
热滞回
VDMOS
Over temperature protection
Reliability
Thermal hysteresis
