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纳秒单脉冲激光诱导AgInSbTe薄膜的相变特性 被引量:2

Phase Change Properties of AgInSbTe Thin Films under Single Nanosecond Laser Pulse Irradiation
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摘要 利用磁控溅射法在K9玻璃基底上制备了Ag8In14Sb55Te23(AIST)纳米薄膜,并利用激光抽运-探测技术测量了薄膜的时间分辨反射率变化特性。研究结果表明,在合适能量密度的单脉冲纳秒激光脉冲作用下,AIST薄膜可以快速从沉积非晶态转化为晶态结构,晶化过程包含中间熔化态。在较低能量密度范围内,反射率变化量和晶化时间都随能量密度变化呈线性增加趋势。 Ag8In14Sb55Te23(AIST) films are deposited on K9 glass substrates by DC magnetron sputtering.A pump-probe system is employed to observe reflectivity change process in real time.The results show that phase transition driven by nanosecond laser pulses can be achieved in a proper fluence range on AIST thin films.The presence of liquid phase is identified by transient reflectivity level between those of the amorphous and crystalline phases.Crystallization time and reflectivity change are linearly proportional to the energy at lower pulse fluences.
出处 《光学学报》 EI CAS CSCD 北大核心 2012年第6期308-312,共5页 Acta Optica Sinica
基金 国家自然科学基金(50872139 61178059) 郑州轻工业学院基金(2010BSJJ031)资助课题
关键词 薄膜 抽运-探测 AgInSbTe薄膜 纳秒激光脉冲 相变动力学 thin films pump-probe AgInSbTe films nanosecond laser pulse phase change dynamics
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  • 1张广军,顾冬红,干福熹.蓝绿激光作用下沉积态Ag_(11)In_(12)Sb_(51)Te_(26)相变薄膜的晶化性能[J].中国激光,2004,31(11):1351-1355. 被引量:1
  • 2张广军,顾冬红,李青会,干福熹,刘音诗.新型AgInSbTe相变薄膜的光学及记录性能[J].光学学报,2004,24(11):1463-1467. 被引量:1
  • 3陈仲裕 何国珍.相变光盘材料的静态测试装置[J].中国激光,1987,14(10):627-629.
  • 4Tominaga J, Nakano T and Atoda N 1998 Appl. Phys. Lett. 73 2078.
  • 5Zhang F, Xu W D, Wang Y, and Gan F X 2005 Solid State Commun. 134 375.
  • 6Hung T T and Lu Y J 2007 Jpn. J. Appl. Phys. 46 3906.
  • 7Hung T T and Lu Y J 2008 Jpn. J. Appl. Phys. 47 6042.
  • 8Shi L, Chong T C, Tan P K et al 2005 Jpn. J. Appl. Phys. 44 3615.
  • 9Jiang L X, Wu Y Q, Wang Yet al 2009 Chin. Phys. Lett. 26 024214.
  • 10Pilard G, Fery C, Pacearescu Let al 2009 Jpn. J. Appl. Phys. 48 03A064.

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  • 1SUTOU Y, KAMADA T, SUMIYA M, et al. Crystalliza- tion process and thermal stability of Gel Cu2Te3 amor- phous thin films for use as phase change materials [ J ]. Acta Mater, 2012, 60(3) :872 -880.
  • 2HUANG H, LI S M, ZHAI F X, et al. Picosecond Laser pulse-driven crystallization behavior of SiSb phase change memory thin films [ J ]. Mater Chem Phys.,2011, 128 ( 3 ) :405 - 409.
  • 3WANG C Z, LI S M , ZHAI J W, et al. Rapid crystalli- zation of Si02/Sbs0Te20 nanocomposite muhilayer films for phase-change memory applications [ J ]. Scripta Mater, 2012, 64(7) : 645 -648.
  • 4WUTFING M, YAMADA N. Phase change materials for rewriteable data storage [J]. Nat Mater, 2007,6 (12) : 824 - 832.
  • 5LEE S Y, KIM H K, KIM J K, et al. Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications [J].J Mater Sci, 2009,44(16) : 4354 -4359.
  • 6FORST M, DEKORSY T, TRAPPE C, et al. Phase change in Ge2Sb2Te5 films investigated by coherent pho- non spectroscopy [ J ]. Appl Phys Lett, 2000,77 ( 13 ) : 1964 - 1966.
  • 7ZHU W L, WANG C Z, SUN M C, et al. Characteriza- tion of Femtosecond laser-irradiation crystallization and structure of multiple periodic Si/Sbso Te20 nanocomposite films by coherent phonon spectroscopy[J]. Opt Ex- press, 2011, 19 (23): 22684-22691.
  • 8GARRENT G A, ALBRECHT T F, WHITAKER J F, et al. Coherent THz phonons driven by light pulse and the Sb problem: What is the mechanism.9 [ J]. Phys Rev Lett, 1996, 77(17) :3661 -3664.
  • 9ZEIGER H J, VIDAL J, CHENG T K, et al. Theory for displacive excitation of coherent phonons [ J ]. Phys Rev Lett, 1992, 45(2): 768-778.
  • 10KIM H K, KIM N H, ROH J S, et al. Considerable changes in crystallization process delivered by N doping in Te-free Sb-rich GeSb binary allay [ J ]. Curr ApplPhys ,2011, 11 ( 3 ) : S404 - S409.

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