1VORONKOV V V, FALSTER R. Vacancy-type microdefect formation in Czochralski silicon [J]. Journal of Crystal Growth, 1998,194(1) :76- 88.
2VORONKOV V V, FALSTER R. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon [ J ]. Journal of Crystal Growth, 1999,204 (4) : 462 - 474.
3KALAEV V V, EVSTRATOV I Y, MAKAROV Y N. Gas flow effect on global heat transport heat and melt convection in Czochralski silicon growth [J]. Journal of Crystal Growth,2003,249(1):87 - 99.
4J1NG C J, IHARA S. Global analysis of heat transfer considering three-dimensional unsteady melt flow in CZ crystal growth of oxide [ J ]. Journal of Crystal Growth, 2007,307 ( 1 ) : 235 - 244.
5KOBAYASHI M, HAGINO T, TSUKADA T, et al. Effect of internal radiative heat transfer on interface inversion in Czochralski crystal growth of oxides [J]. Journal of Crystal Growth ,2002,235( 1 ) :258 - 270.
6KITAMURAA K, FURUKAWAA J, NAKADA Y, et al. Radial distribution of temperature gradients in growing CZ-Si crystals and its application to the prediction of microdefect distribution [ J ]. Journal of Crystal Growth, 2002,242 ( 3 ) : 293 - 301 .
