摘要
碳的加入为 Si- Ge系统在能带和应变工程上提供了更大的灵活性 .处于替代位置的碳可以缓解 Si Ge合金的应变 ,同时调节其能带 .报道了用 UHV/CVD生长的掺碳达 2 .2 %的锗硅碳合金 ,获得了良好的外延层质量 ,应变缓解效应明显 .使用了 X射线衍射 ( XRD) ,二次离子质谱( SIMS)与高分辨电子透射显微镜 ( HRTEM)对外延层进行检测 ;使用傅里叶红外吸收光谱( FTIR)确定碳原子处于替代位置 。
The ternary alloy of SiGeC has attracted much attention in recent years. The strain in Si 1-x-y Ge\-xC\-y the epilayer can be relieved and the band gap can be modified because of the carbon for substitute.High quality Si 1-x-y Ge xC y alloy with 2\^2% C is grown at a relatively high temperature (760℃) on Si(100) wafer using Ultra\|High Vacuum/Chemical Vapor Deposition (UHV/CVD) system. The samples are investigated with high\|resolution cross\|sectional transmission electron microscope (HRTEM) and X\|ray diffraction(XRD). Relatively flat growth profiles of the film are confirmed by secondary ion mass spectroscopy (SIMS). Fourier transform infrared spectroscopy (FTIR) is also used to testify that the carbon atoms are on the substitutional sites.
基金
国家自然科学基金重大项目 !( 69890 2 3 0 )
国家自然科学基金!( 696860 0 2 )
