摘要
基于 MOSFET热载流子可靠性物理 ,并结合电应力条件下热载流子退化特征量ΔIds/Ids0 、Isub等实测数据的拟合处理 ,发展了可表征退化物理意义的衬底电流与退化 /寿命参数提取模型 ;进而由自动测试 ATE与 CAD技术相结合的监测系统 ,实现了载流子速度饱和临界电场Ecrit、有效导电长度 LC和寿命因子 H、m、n提取 .实验研究结果表明 ,模型及提取参数合理可信 ,并可进一步应用于 MOSFET及其电路的退化
In the light of both MOSFETs hot carrier reliability physics and fitting handling of their characteristics parameters ΔI ds /I ds0 ,I sub tested under electrical stress, a extraction models of the substrate current and degradation/age parameters are developed. Extraction of critical electric field E crit for carrier velocity saturation, effective conduction length L C and aging factors H,m,n are realized by a monitor system combining ATE and CAD techniques. Experimental results indicate that models and its parameters are reasonable and could be applied in degradation/age simulation and monitoring of MOSFETs devices/circuits.
基金
国家自然科学基金!(编号 :695760 0 4 )
国防预研 (基金 )
