摘要
用二维 MEDICI商用器件模拟软件对双 MOS门极控制的发射极开关晶闸管 EST( Emitter Switched Thyristor)的正偏置安全工作区 FBSOA( Forward Biased Safe- Operation-Area)及其关断动态的电流分布进行了模拟研究 .证明该器件采用 P型转向器 ( diverter)与双MOS门极相结合的结构使得空穴电流分流从而显著地提高了 EST的开关能力 ,其
The switching performance and Safe\|Operation\|Area (SOA) of MOS Dual\|Gated Emitter\|Switched Thyristor (EST) with a novel diverter (DGESTD) is simulated. This device has the function of shunt\|flowing of hole current by means of P\|type diverter and dual MOS\|gate control to obtain further performance improvements. The increased switching capability and wider Forward Biased SOA of the DGESTD compared to usual EST have been verified by the simulation results.
