摘要
建立了 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了GAT的栅屏蔽效应的解析表达式 ,并借助计算机对栅屏蔽效应给以证实。该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
A two dimensional analytical model of the electric potential and field distribution in GAT’s collector depletion space in the cut off state is derived for the first time.The formula for GAT’s gate shielding effect is derived and the gate shielding effect is proved by aid of computer quantitatively.This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high breakdown voltage.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第1期53-59,共7页
Research & Progress of SSE
基金
国家自然科学基金!( No.698962 60 -0 6)
国家高技术研究发展计划!( 863 -71 5-0 1 0 )
