摘要
本文介绍利用界面混合技术对ＧａＡｓ／ＡｌＧａＡｓ量子阱结构进行微调，通过荧光光谱和光响应电流谱给出了质子注入和快速返火对禁带宽度及导带内子带位置的影响，荧光光谱峰位随注入剂量（５ｘ１０４～５ｘ１０１５ｃｍ２）的增加从７６６ｕｍ持续蓝移至７５３ｕｍ，光响应峰值波长从８．２ｕｍ移至１０．３ｕｍ．
In this paper we shall demonstrate the use of intermixing in modify of GaAs/AlGaAs quantum-well. The paper shows that proton implantation can achieve large energy shifts after standard annealing procedures. The PL and photoresponse spectrum were measured as a function of ion dose in the range 5 x 10~14 cm^-2 to 2.5 x 10~15 cm^-2, the peak photoresponse wavelength was tunable between 8.4 um to 10.2 um and PL peak from 780 um to 850 um.
出处
《量子电子学报》
CAS
CSCD
2000年第1期31-35,共5页
Chinese Journal of Quantum Electronics
关键词
质子注入
快速退火
砷化镓
红外探测器
H+ ion implanlantation, rapid therma, annealing, GaAs/AlGaAs, QWIP
