钛酸钡系PTCR半导体陶瓷界面态分析

On the Interface State of BaTiO3-based PTCR Semiconducting Ceramics

对形成钛酸钡系半导瓷ＰＴＣＲ效应的界面态进行了探讨，分析了在居里点以上由于界面态和介电常数的共同作用引起的材料电阻率猛增几个数量级的原因；同时对钛酸钡系ＰＴＣＲ半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。

The interface state of BaTiO3 semiconducting celamics, which has a significant influence on the PTCR effect was analyzed. Above the curie temperture,the co-interacton of the interface state and the dielectric constant on the resistiblty jump has been studied.According to defect chemistry of BaTiO3-based semiconductor ceramics,the composition of the interface state was researched. Amethod of the interface state density measurement was proposed.