摘要
本文采用微波等离子体化学气相沉积法(MPCVD),高纯N2(99.999%)和CH4(99.9%)作反应气体,在多晶Pt(99.99%)基片上沉积C3N4薄膜。X-射线能谱(EDX)分析结果表明N/C原子比为1.0～1.4,接近C3N4的化学比;X射线衍射谱说明薄膜主要由β和α-C3N4组成;FT-IR谱和Raman谱支持C-N键的存在。
C 3N 4 thin films have been prepared on Pt substrates by microwave plasma chemical vapor deposition (MPCVD) method.Energy dispersive X ray (EDX) analysis showed that N/C ratios of the films can be as high as 1.33.X ray diffraction results showed that the films consisted of β and α C 3N 4.FT IR and Raman spectroscopy supported the existence of C N single bond.
出处
《真空电子技术》
2000年第1期52-55,共4页
Vacuum Electronics
基金
国家自然科学基金资助课题! ( 19674 0 0 9)
