基于有效态密度的MOS结构电荷控制模型

MOS Structure Charge Control Model Based on Surface Layer Effective Density\|of\|States\+*

从载流子在 MOS结构反型层内的分布出发 ,利用表面有效态密度 ( SLEDOS:SurfaceLayer Effective Density- of- States)的概念 ,在经典理论框架内建立了包含载流子分布对表面势影响的电荷控制模型 .该模型包含了强反型区表面电势的变化对载流子浓度的影响 ,采用了一种新的高效的迭代方法 。

Based on the analysis of the distribution of inversion layer carrier in the space charge region of MOS structure, the concept of Surface Layer Effective Density\|of\|States (SLEDOS) is proposed. Then a new charge control model is established in which the effects of inversion layer carrier distribution on surface potential are included. In this model, the effect of surface potential change after strong inversion on carrier sheet density is included and a new efficient iterative method is adopted. The model is with high efficiency and accuracy.