摘要
研究了 PMOS剂量计在不同温度和栅偏置下的辐照退火表现 .结果表明 :温度和退火偏置条件是影响初始退火速率和退火幅度的重要因素 ,较高退火温度下 ,退火速率高 ,幅度大 ;相同退火温度下 ,正偏置与负偏置相比有加速退火的作用 ,其退火幅度也较大 .在 1 80℃ ,零偏条件下获得了最快的 1 0 0 %的退火效果 ;
The annealing behaviors of PMOS Dosimeters with various gate biases over a wide temperature range have been investigated. The results show that the temperature and gate bias during annealing are two important factors influenced on the anneal rate and fading of threshold voltage shifts. The higher the temperature during annealing, the faster the anneal rate and the deeper the fading of threshold voltage shift. At same anneal temperature, the anneal rate could be raised, and more fading could be achieved by biased positive voltage than by negative voltage between gate and source. The fastest near 100% and fading near 100% could be obtained with zero bias at 180℃. The experimental results are interpreted by using an combined Anneal model.
基金
中国科学院院长基金特别支持项目
