摘要
过去,鲜有Zr掺杂氧化铟锡(ITO)薄膜电学稳定性及耐蚀性的研究报道。采用磁控溅射法制备了ITO薄膜和Zr掺杂ITO薄膜(ITO∶Zr),研究了2种薄膜的微观结构、光电性能及其在3种模拟腐蚀环境(酸性、海洋、工业)腐蚀液中的电学稳定性及耐腐蚀性。结果表明:Zr的掺杂导致了ITO薄膜择优取向向(400)晶面转变,ITO∶Zr薄膜比ITO薄膜具有更好的光电性能;2种薄膜在3种环境介质中都能发生自钝化,在工业环境中具有最好的耐腐蚀性能;ITO∶Zr薄膜比ITO薄膜具有更好的电学稳定性和耐腐蚀性。
Indium tin oxide(ITO) film and ITO film doped with Zr(ITO∶Zr film) were prepared by magnetron sputtering.The microstructure and optical-electrical properties of the two kinds of films as well as their electrical stability and corrosion resistance in three kinds of simulated corrosive environments(acidic environment,oceanic environment and industrial environment) were investigated.It was found that Zr doping caused preferred orientation transformation of ITO film towards(400) plane,and ITO∶Zr film possessed better optical-electrical properties than ITO film.Both ITO and ITO∶Zr films were able to be self-passivated in different corrosive environments,and they showed the best corrosion resistance in simulated industrial corrosive environment.Besides,ITO∶Zr film possessed better electrical stability and corrosion resistance than ITO film.
出处
《材料保护》
CAS
CSCD
北大核心
2012年第6期32-34,38,共4页
Materials Protection
基金
常州市应用基础研究计划项目(CJ20110004)
关键词
磁控溅射
ITO薄膜
Zr掺杂
电学稳定性
耐腐蚀性
腐蚀环境
magnetron sputtering
ITO film
Zr doping
electrical stability
corrosion resistance
corrosive environment
