MOCVD生长碳掺杂GaAs/AlGaAs大功率半导体激光器

MOCVD Growth of Carbon Doped GaAs/AlGaAs High Power Semiconductor Lasers

利用低压金属有机金属化合物汽相淀积方法 ,以液态 CCl4为掺杂源生长了高质量 C掺杂 Ga As/Al Ga As材料 ,并对生长机理、材料特性以及 C掺杂对大功率半导体激光器的影响进行了分析。在材料研究的基础上生长了以 C为 P型掺杂剂的 Ga As/ Al Ga As/ In Ga As应变量子阱半导体激光器结构 ,置备了高性能 980 nm大功率半导体激光器。

WT5”BZ]:High quality carbon doped GaAs/AlGaAs materials were grown by LP MOVPE method using CCl 4 as dopant.The mechanism,material property and the effect of carbon doping on the high power laser diodes were analyzed.On the basic of material study,high performance GaAs/AlGaAs/InGaAs strain quantum well laser was fabricated. [WT5”HZ]