摘要
应用高纯氮携带液氧蒸气作为氧源的热氧化技术和 Si H4- NH3体系 L PCVD技术 ,制作对辐照吸收有明显响应的 MNOS器件 ,在 10 3~ 10 5 Gys剂量范围内其平带电压漂移值随辐照剂量的增加按指数规律衰减。样品接受辐照是非破坏性的 ,在接受 5× 10 5 Gys的大剂量辐照后 ,通过简单的正负脉冲电压处理就可恢复到初始状态 ,并在接受新的辐照时以同样的规律给出响应 。
In this paper,we have prepared MNOS capacitor by the therm oxidation technique with pure nitrogen carrying oxygen when it passes through the surfacse of liquid oxygen and LPCVD technique with SiH 4 NH 3,which have obvious response to γ ray radiation.The rule of the radiation response of the sample is found:within 10 3~10 5Gys of accumulated dose,the band vol tage of the MNOS capacitor declined exponentially with the accumulated dose when the sample received γ ray radiation. And the radiation response of the sample is non damaged.Being applied positive or negative pulse voltage simply,the sample returned to the original state,even though having been taken over 5×10 5Gys dose of γ ray radiation,and gave the same rule of radiation response.Consequently,the MNOS capacitor prepared with the above techniques is available for use of radiation dosimeter.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第2期17-19,28,共4页
Semiconductor Technology
基金
国家自然科学基金资助课题!( 68760 0 2 )