摘要
提出了一个用于分析 SITH正向阻断态的新模型。这个模型在结构上类似于 SCR。这样 ,就可以把SITH的二维分析简化为 SCR的一维分析。我们应用了这个模型来分析 SITH的负阻特性并且计算出了阳极正向转折电压 ,计算结果与实际测量值相符合 。
A model is proposed to analyze SITH in forward blocking.The models structure is similar to that of SCR.Thus SITH can be analyzed in one dimension instead of two dimensions. We have used this model to analyze SITHs negative resistance in SCRs way and calculate the anode forward breakover voltage.The result accords with practical measurement.So,it is reasonable to extract this model from SITH.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第2期20-22,31,共4页
Semiconductor Technology