摘要
采用 Mo栅工艺技术降低栅串联电阻 ,通过优化工艺参数 ,全离子注入工艺 ,研制出了在 40 0 MHz下共源推挽结构连续波输出 30 0 W的高性能 VDMOSFET,其漏极效率大于 5 0 % ,增益大于 9d B。
A vertical double diffused field effect transistor(VDMOSFET)that can deliver output power of 300W CW at 400MHz has been developed by the optimization of technology parameters and full ion implantation.Mo gate is employed for the reduction of gate series resistance.Parallel operation of the device has been successfully achieved to deliver output power of 300W CW with the gain greater than 9dB and drain efficiency higher than 50% at V DS =50V and f =400MHz in a common source,push pull configuration.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第2期26-28,共3页
Semiconductor Technology
