离子束感生电荷显微术的研究

Ion Beam Induced Charge Microscopy

使用低束流技术 ,在高分辨率扫描质子微探针装置上开展了离子束感生电荷显微术 ,并研究了半导体材料 Ga As的电子学性能。实验结果表明 ,在同一扫描区域内 ,材料的电荷收集效率具有不均匀特性 ,而且氦离子激发产生的 IBIC显微图谱的对比度比质子要强。

Ion beam induced charge microscopy was studied in nuclear microprobe using low beam current technology,the electrical property of GaAs semiconductor material was also studied.The result shows,the material has inhomogeneous property in charge collection efficiency within the scanning area and the contrast of IBIC image by using He ion is higher than by using proton.