摘要
The transient photovoltage of ITO/CuPc/AI is studied. The transient photovoltage under the Al side illumination is much greater than that under ITO side illumination. It is not negligible while light is almost completely absorbed by the Al layer. It seems that the light absorption of the Al layer could enhance the generation of the photoinduced carriers in the organic layer, which is further shown by the transient photovoltage study of ITO/Al/NPB/Au. A possible mechanism proposed is that the holes generated in the Al are because of light absorption that is injected from the AI to organic materials. This results in further charge separation by the internal built-in electric field.
The transient photovoltage of ITO/CuPc/Al is studied. The transient photovoltage under the Al side illumination is much greater than that under ITO side illumination. It is not negligible while light is almost completely absorbed by the Al layer. It seems that the light absorption of the Al layer could enhance the generation of the photoinduced carriers in the organic layer, which is further shown by the transient photovoltage study of ITO/Al/NPB/Au. A possible mechanism proposed is that the holes generated in the Al are because of light absorption that is injected from the Al to organic materials. This results in further charge separation by the internal built-in electric field.
基金
supported by the Ministry of Science and Technology of China (Grant No. 2012CB921401)
the National Natural Science Foundation of China (Grant No. 11134002)
