慢正电子技术研究ZrO_2(Y_2O_3)薄膜的温度效应

A Study of the Temperature Effect of ZrO_2(Y_2O_3) Thin Film by Slow Positrons Beam

用慢正电子技术研究了在溅射时不加偏压 ,纯 Ar气氛 ,基片分别为加热 3 0 0℃和不加热的情况下制备的 No.2系列和 No.7系列的用 Y2 O3稳定的 Zr O2 薄膜 (简称 YSZ膜 ) .研究发现 :YSZ膜心部区 S参数随退火温度升高而降低 ;YSZ膜的过渡区宽度随退火温度升高而变窄 ;基片加热 ,有助于获得稳定、均匀。

The thin film materials of ZrO 2(Y 2O 3) are studied by slow Positron Beam. The thin film materials are made for r.f puttering in pure Ar atmosphere without biasing, but the No.2 series and No.7 series made respectively when heated at 300℃ and not heated. I is seen that the S parameter of core part in YSZ thin film decrease with the temperature of annealing increasing while the width of transition part in YSZ thin film narrows with the temperature of annealing increasing. A stable, even and dense thin film is prepared under heating.