摘要
以水合氯化钌和乙醇钠为原料,首先制备了乙醇钌的乙醇溶液。通过对乙醇钌的乙醇溶液进行雾化,以2∶1的氮氧比为载气,在400℃常压条件下沉积了RuO2薄膜。采用XRD和AFM分别表征了薄膜的结构及表面形貌,证实了RuO2薄膜的晶体结构,晶粒尺寸为21.4nm。通过电化学测试,RuO2薄膜的容量可达0.818F/cm2(549F/g),充放电性能良好。经1000次循环测试,剩余容量仍然可达到初始容量的92.1%,同时发现RuO2薄膜具有较低的阻抗,有利于薄膜电容器以大电流快速充放电。
Hydration ruthenium chloride and sodium ethylate were employed as the materials to prepare the ethanol solution of ruthenium ethylate, which was used to deposit RuO2 thin film by atmospheric pressure nebulization enhanced chemical vapor deposition（APNECVD） with a carrier gas of 2N2 ： 1O2 at 400℃. The as-deposit thin film was characterized by XRD and AFM, suggesting the crystal structure of RuO2 thin film and tiny crystallite size（21.4 nm）. The electrochemistry measurement confirmed that the RuO2 thin film possesses a capacity of 0. 818F/cm2 （549F/g） and excellent charge-discharge characteristic. The remainder capacity can maintain 92.1% of initial capacity after 1000 cycles. In addition, the lower impedance of RuO2 thin film was in favour of charge-discharge of RuO2 thin film in high current.
