高迁移率InGaAs／InP量子阱中的有效g因子

Effective g-factor in high-mobility InGaAs/InP quantum well

利用化学束外延法制备了高迁移率的In_(0.53)Ga_(0.47)As/InP量子阱样品.在样品的低温磁输运测试中,观察到纵向磁阻的Shubnikov-de Hass(SdH)振荡和零场自旋分裂引起的拍频.本文提出一种解析的方法,即通过同时拟合不同倾斜磁场下SdH振荡的傅里叶变换谱,得到有效g因子的大小.

High-mobility lno.53Gao.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass （SdH） oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.