常压MOCVD法制备TiO_2薄膜及性质研究

The Fabrication and Characterization of AP-MOCVD Titanium Dioxide Films

利用常压MOCVD法在Si及Al2O3衬底上制备了TiO2薄膜.研究了沉积温度和退火温度对TiO2薄膜结构和形貌的影响,以及TiO2薄膜的光学性质.研究发现,沉积温度为600℃时,制备的TiO2薄膜结构为锐钛矿相,薄膜质量较高.TiO2薄膜在1 090℃高温退火后,薄膜结构完全转变为金红相.TiO2薄膜在可见区域有着高达90%以上透射率,在紫外区域有着强烈的吸收.

The TiO2 film is fabricated on Si and A12 03 substrates by atmospheric pressure metal organic chemical vapor deposition （AP-MOCVD）. The effects of grown temperature and anneal temperature on the crystal structure and morphology of TiO2 film are researched and the optical quality of TiO2 film is also investigated. The researches show that anatase TiOz film is fabricated at 600℃ with a higher quality. After a high anneal temperature （ 1 090℃ ） , the anatase TiO2 film is turned to rutile TiO2 film. The TiO2 film has a high of more than 90 % transmittance in the visible region and has a strong absorption in the ultraviolet region.