期刊文献+

单层OLED器件模型的MATLAB分析计算 被引量:1

MATLAB Analysis and Computation of Single Layer OLED Device Model
下载PDF
导出
摘要 近年来有机发光二极管(OLED)的工业应用特别是在平板显示器中的应用已被广泛研究。OLED发光是分别由阴极和阳极注入的电子和空穴在发光层中复合的结果。单层结构是OLED器件的基础。为了提高OLED器件的性能,需要详细理解电荷载流子的注入过程。借助MATLAB求解了无量纲单层OLED器件模型,介绍了有关分析计算方法和技巧。综合利用MATLAB提供的符号求解常微分方程、绘图等命令,可使工作量大为减少。该方法具有编程简单,使用方便、实用性强等特点。 Organic light-emitting diodes (OCED) have been extensively studied for industrial application, especially for flat panel displays in recent years. Light emitting in OLED is the result of the recombination of electron and hole in light emitting layer, which are injected from cathode and anode. Single layer structure is the basis of OLED device. To improve the efficiency of OLED device, a detailed understanding of the charge carrier injection processes is necessary. In this paper, the model of single layer OLED device in dimensionless form Was solved with the help of MATLAB, the analytical methods and skills were presented. The workload can be greatly reduced with synthesized use of a number of functions provided in MATLAB, such as symbolic solution of ordinary differential equations, plot etc. This technique is simple in programming, convenient in operation and practical.
机构地区 昆明物理研究所
出处 《红外技术》 CSCD 北大核心 2012年第6期332-335,共4页 Infrared Technology
关键词 有机发光二极管 电场分布 载流子分布 单层模型 organic light emitting diode, electric field distribution, carrier distribution, single layer model
  • 相关文献

参考文献10

二级参考文献43

  • 1[1]Slooff L H,Polman A,Cacialli F,et al.Near-infrared electroluminescence of polymer light-emitting diodes doped with a lissamine-sensitized Nd3+ complex.Appl Phys Lett,2001,78:2122
  • 2[2]Hu W P,Matsumura M,Wang M Z,et al.Red electrolu-minescence from an organic Europium complex with a triphenylphosphine oxide ligand.Jpn J Appl Phys,2000,39(Pt.1,11):6445
  • 3[3]List E J W,Leising G,Schulte N,et al.White light emission from a polymer-macromolecule blend system due to energy and charge transfer.Jpn J Appl Phys,2000,39(Pt.2,7B):L760
  • 4[4]Pandey S S,Takashima W,Nagamatsu S,et al.Regioregularity vs regiorandomness:effect on photocarrier transport in poly(3-hexylthiophene).Jpn J Appl Phys,2000,39(Pt.2,2A):L94
  • 5[5]Fournet P,Coleman J N,Lahr B,et al.Enhanced brightness in organic light-emitting diodes using a carbon nanotube composite as an electron-transport layer.J Appl Phys,2001,90:969
  • 6[6]Yang X H,Mo Y Q,Yang W,et al.Efficient polymer light emitting diodes with metal fluoride/Al cathodes.Appl Phys Lett,2001,79:563
  • 7[7]Thompson J,Blyth R I R,Mazzeo M,et al.White light emission from blends of blue-emitting organic molexcules:a general route to the white organic light-emitting diode?Appl Phys Lett,2001,79:560
  • 8[8]Wilkinson C I,Lidzey D G,Palilis L C,et al.Enhanced performance of pulse driven small area polyfluorene light emitting diodes.Appl Phys Lett,2001,79:171
  • 9[9]Michio M,Takumi F.Efficient electroluminescence from arubrene sub-monolayer inserted between electron-and hole-transport layers.Jpn J Appl Phys,2001,40(Pt.1,5A):3211
  • 10[12]Parthasarathy G,Shen C,Kahn A.Lithium doping of semiconducting organic charge transport materials.J Appl Phys,2001,89:4986

共引文献11

同被引文献27

  • 1姬荣斌,唐利斌,张筱丹.有机半导体探测器材料的研究展望[J].红外技术,2006,28(1):2-6. 被引量:4
  • 2甄红楼,熊大元,周旭昌,李宁,邵军,陆卫.红外-近红外波长变换器件p-QWIP-LED研究[J].中国科学(G辑),2006,36(3):327-336. 被引量:7
  • 3Tang C W, Vanslyke S A. Organic electro-luminescent diode[J]. Appl. Phys. Lett., 1987, 51(12): 913-915.
  • 4Burroughes J H, Bradley D D C, Brown A R, et al. Light-emitting diodes based on conjugated polymers[J]. Nature, 1990, 347(6293): 539-541.
  • 5Overton G. Infrared imaging OLED converts IR to visible: Night vision for your cell phone?[J]. Laser Focus World, 2010, 46(7): 16-31.
  • 6Rokhinson L P, Tsui D C, Benton J L, et al. Infrared and photoluminece spectroscopy of p-doped self-assembled Ge dots on Si0]. Appl. Phys. Lett., 1999, 75(16): 2413-2415.
  • 7Peng Y H, Chen C C, Kuan C H, et al. Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum[J]. Solid-State Electronics, 2003, 47(10): 1775-1780.
  • 8Liu H C, Li J, Wasilewski Z R, et al. Integrated quantum well intersub-band photodetector and light emitting diode[J]. Electronics Letters, 1995, 31(10): 832-833.
  • 9Sandhu J S, Heberle A P, Alphenaar B W, et al. Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel[J]. AppL Phys. Lett., 2000, 76(12): 1507-1509.
  • 10Yang Y, Liu H C, Shen W Z, et al. GaAs-based near-infrared up-conversion device fabricated by wafer fusion[J]. Electronics letters, 2011, 47(6): 393-395.

引证文献1

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部