摘要
晶体硅太阳电池一直占据光伏市场的主导地位,关于其光衰减的研究也因此受到了广泛关注。综合评述了近年来国内外晶体硅太阳电池光衰减现象的研究进展,介绍了硼氧缺陷、铁硼对以及铜相关的缺陷导致光衰减的基本机制,着重阐述了硼氧缺陷的产生率、钝化率以及相应的激活能大小与硼氧含量的关系。最后介绍了减弱或避免光衰减的一些措施。
The PV market has been always dominated by crystalline silicon solar cell, so many attentions have been paid to the research of light induced degradation of crystalline silicon solar cell. The worldwide research progress of light induced degradation is reviewed and the mechanisms of light induced degradation by BO2i complexes, FeB pairs and Cu-related defects are introduced. The relationship between the BO25 defect generation rate, deactivation rate and corresponding activation energy and boron concentration, oxygen concentration is introduced in details. Finally the technical solutions for reducing or eliminating light induced degradation are proposed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第11期15-21,共7页
Materials Reports
基金
国家自然科学基金(61076056)
福建省重大科技专项(2007HZ0005-2)
关键词
光衰减
晶体硅太阳电池
硼氧缺陷
铁硼对
铜相关缺陷
light induced degradation, crystalline silicon solar cell, BO25 defect, FeB pair, Cu-related defect