气氛氧压对脉冲激光法制备的CeO_2/Si薄膜的结晶取向的影响

Influences of Ambient Oxygen Pressures on the Crystalline Orientation of CeO_2/Si Thin Films Prepared by Pulsed Laser Deposition

用脉冲激光镀膜法 ,在不同的温度和氧压条件下 ,在Si(10 0 )片上制备了一系列的CeO2 膜。X射线衍射分析表明 ,在较低的氧压下生长的CeO2 膜为 (111)取向 ,在较高的氧压下生长的膜则为 (10 0 )取向。研究表明 ,CeO2 膜的取向对氧压显示了独特的依赖性 ,氧压对控制膜的结晶取向具有十分重要的作用。讨论了氧压对CeO2 薄膜结晶取向影响的可能机理。

A series of CeO 2 thin films were deposited on Si(100) substrates at a series of deposition temperatures and oxygen pressures by pulsed laser deposition.X-ray diffraction of these films revealed that the crystalline orientations of the CeO 2 films grown at low oxygen pressures were (111) orientation,while that grown at a relative high oxygen pressures possessed (100) orientation.Oxygen pressure was found to be important to control the crystalline orientation of CeO 2 thin films,and these films showed an unique oxygen pressure dependence of the orientation.A possible mechanism of the dependence of the orientation of CeO 2 films on the oxygen pressure was proposed to explain these results.