期刊文献+

高比表面积SiC的制备及在克劳斯尾气脱硫中的应用

Preparation of SiC with High Specific Surface Area and Its Application in Desulfurization of Claus Tail Gas
下载PDF
导出
摘要 介绍了以丙烯作为碳源采用化学气相浸渗法将热解碳渗入介孔氧化硅材料SBA-15中得到SiO_2/C材料,然后在1 250℃高温和惰性气体保护下将该材料碳热还原转化为高比表面积的SiC材料,以其为载体制备氧化铁催化剂的方法。并对SBA-15和SiO_2/C及SiC材料进行XRD表征,氮吸附BET法测定了这3种材料的比表面积、孔体积和孔径。结果表明,碳化硅材料的比表面积100.7 m^2/g,孔体积0.29 cm^3/g,平均孔径11.7 nm。将碳化硅负载氧化铁催化剂用于克劳斯尾气脱硫,催化剂表现出较好的活性和寿命。 This paper introduced the method preparing SiC with the high specific surface area which sup ported iron oxide catalyst as follows: SiOJC precursor was first obtained by chemical vapor infiltration using propylene as carbon source, in which the pyrolytic carbon was infiltrated into the mesoporous silica material SBA 15 ,then the SiOJC precursor was reduced thermally by carbon into SiC under the protection of inert gas at 1 250 °C. The materials such as SBA 15, SiO2/C, and SiC were characterized by XRD. The specific surface area, pore volume, and pore diameter of the materials were determined by N2 physical adsorption/de sorption. The results indicated that silicon carbide had the specific surface area of 100 m2/g, the pore volume of 0.29 m3/g , and the average pore diameter of 11.7 nm. Iron oxide supported SiC material for desulfurization of Claus tail gas had long life and catalytic performance.
出处 《精细石油化工进展》 CAS 2012年第5期24-29,共6页 Advances in Fine Petrochemicals
关键词 碳化硅 高比表面积 催化剂载体 尾气脱硫 silicon carbide high specific surface area catalyst support desulfurization of tail gas
  • 相关文献

参考文献10

  • 1Nhut J M, Ricardo V, Laurie P, et al. Synthesis and Catalytic Uses of Carbon and Silicon Carbide Nanostructures [ J ]. Catal Today, 2002,76(1) : 11.
  • 2Frederic M, Pascale D, Baudouin H, et al. Synthesis and Characterization of High Specific Surface Area Vanadium Car- bide[ J]. J Catal. 1997, (169) :33.
  • 3孔渝华,王先厚,李仕禄,李木林,张清建,陈健.15年常温精脱硫新技术的进展[J].化肥设计,2004,42(5):46-50. 被引量:11
  • 4Ledoux M J, Huu C P, Keller N, et al. Selective Oxidation of H2S in Claus Tail- gas Over SiC Supported NiS2 Catalyst[J]. Catal Today ,2000, ( 61 ) : 157 - 163.
  • 5Keller N, Huu C P, Estoums C, et al. Low Temperature Use of SiC - supported NiS2 - based Catalysts for Selective H2 S Ox- idation [ J ]. Applied Catalysis A : General,2002, ( 234 ) : 191 - 205.
  • 6张劲松,曹丽华,杨永进,JEFFREY K.S.WAN.微波诱导甲烷在活性炭/碳化硅上直接转化制C_2烃[J].催化学报,1999,20(1):45-50. 被引量:27
  • 7Parmentier J, Patarin J, Dentzer J, et al. Formation of SiC viaCarbothermal Reduction of a Carbon - containing Mesoporous MCM48 Silica Phase [ J ]. Ceram Inter,2002, (28) : 1.
  • 8Jin Guoqiang, Gun Xiangyun. Morphology - controlled Synthe- sis of Nanostroctured Silicon Carbide [ J ]. Microporous and Me- soporous Materials,2003, (60) :207 - 212.
  • 9Atwater J E, Akse J R, Wand T C, et al. Preparation of Sili-con - carbide - coated Activated Carbon Using a High - tem- perature Fluidized Bed Reactor [J]. Chem. Eng. Sci. 2001, (56) :2685.
  • 10Schmidt W R, Interrante L V. Pyrolysis Chemistry of an Or- ganometallic Precursor to Silicon Carbide [ J ]. Chem Mater 1991 ,(3) : 257.

二级参考文献8

共引文献36

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部