混合环境气体配比对纳米硅晶粒角度分布的影响

Influence of the Mixture Gases Ratio on the Angular Distribution of Silicon Nanoparticles

为了研究混合环境气体配比对脉冲激光烧蚀制备纳米硅(Si)晶粒角度分布的影响,采用XeCl准分子激光器,烧蚀高阻抗单晶Si靶,改变混合环境气体配比(He/Ar=4∶1、1∶10、1∶1、1∶4、1∶2),在半圆环衬底上成功制备了一系列纳米Si晶薄膜。使用扫描电子显微镜(SEM)图像、X射线衍射谱(XRD)和拉曼光谱(Raman)对其进行表征分析。结果表明,在五种配比下,纳米Si晶粒的平均尺寸均随着偏离羽辉轴向夹角的增大而减小;各个角度处,纳米Si晶粒的平均尺寸均随着混合环境气体平均原子质量的增加而呈现先减小后增大的趋势。从传输动力学角度,对结果进行了定性分析。

In order to study the influence of the mixture gases ratio on the angular distribution of silicon nanoparticles prepared by pulse laser ablation.The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser under the mixture ambient of 10 Pa,the gases mixture ratio He/Ar（4∶ 1、1∶ 10、1∶ 1、1∶ 4、1∶ 2）were modulated to synthesize Si thin films on a half-cirque substrate.The samples were characterized by Scanning Electron Microscopy（SEM）,X-ray Diffraction（XRD） and Raman spectroscopy（Raman）.The results indicated that the grain average size decrease with increasing of the angle under the five conditions.Meanwhile,the grain average sizes first decrease and then increase with increasing of average atomic mess under every angle.The transfer dynamics were used to analyze the experiment results qualitatively.