三氯氢硅和氢气系统的气相沉积三维模拟

3-D CVD Model of Polysilicon in Trichlorosilane-hydrogen System

建立了氢气和三氯氢硅系统的多晶硅气相沉积反应模型,通过Chemkin 4.0耦合气相反应、表面反应机理,利用流体力学软件Fluent 6.3.26数值求解。根据模拟结果绘制了进气温度、进气组成、沉积表面温度以及反应压力与硅沉积速率的关系曲线,阐述了这些条件对于硅沉积速率的影响,同时把模拟结果与文献中的实验数据和计算结果进行对比。结果表明,硅沉积速率随反应温度和反应压力的提高而提高,随进气温度的提高而提高,当氢气摩尔组成低于0.8时,与氢气物质的量组成成正比,氢气物质的量组成大于0.8时,与氢气摩尔组成成反比。

A CVD model of polysilicon in Trichlorosilane-Hydrogen system is established,coupling gas phase reactions and surface reactions by Chemkin 4.0,then numerical solution by CFD software Fluent 6.3.26 is made.According to model results,silicon growth rate curves regarding gas inlet temperature,gas composition,surface temperature and reaction pressure are plotted,addressing silicon growth rate with different conditions while the model for this deposition process has been compared to experimental and calculated data obtained from literature.As a result,assuming all other conditions constant,silicon growth rate increases with increase of surface temperature,reactor pressure as well as gas inlet temperature,when hydrogen mole fraction is less than 0.8,silicon growth rate is proportional to hydrogen mole fraction,when more than 0.8,silicon growth rate is on the contrary.