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动力学蒙特卡洛(KMC)模拟薄膜生长 被引量:5

Kinetic Monte Carlo(KMC) Simulation of Thin Film Growth
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摘要 本文以扩散理论为基础,利用KMC模拟方法,考察了温度对薄膜生长速率和表面形貌的影响以及生长表面的粗糙化相变过程。模拟表明,温度升高有利于提高薄膜生长速率,薄膜生长以"成核-岛数增长-岛的长大融合"的方式进行。模拟发现薄膜生长初期存在粗糙化相变过程,当温度低于相变温度时,薄膜分层生长,生长速率较慢;当温度高于相变温度时,薄膜表面粗糙度骤然升高,生长速率加快。 The effect of temperature on thin film growth speed, surface appearance and the roughness transformation process were studied by Kinetic Monte Carlo simulation method based on surface diffusion theory. The simulation indicated temperature increasing advantageous in thin film growth. The thin film growth can be regarded as " coring- island number increasing- islands coalesce" progress. It was found that there is a roughness transformation process in the initial period of film growth. When the temperature is lower than the transformation temperature, the thin film grows with a way of layer-by-layer and the growth speed is slow. When the temperature is higher than the transformation temperature, the thin film surface roughness increased obviously, and the growth speeds enhanced.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2012年第3期792-797,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金(11175257)资助项目
关键词 动力学蒙特卡罗 计算机模拟 微观生长机制 相变温度 Kinetic Monte Carlo computer simulation microscopic growth mechanism transformation temperature
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参考文献9

  • 1宋鹏,陆建生,瑚琦,赵明娟,杨滨.薄膜沉积机理的计算机模拟应用和发展[J].材料导报,2003,17(F09):154-157. 被引量:6
  • 2Meixner M, Kunert R, Scholl F. Control of Strain-mediated Growth Kinetics of Selfassembled Semiconductor Quantum Dots [ J]. Phys. Rev. B, ( S1098-0121 ), 2003, 67 (19) : 195301.1-195301.12.
  • 3张佩峰,郑小平,贺德衍,李廉.Kinetic Monte Carlo方法对薄膜生长初期表面形貌的研究[J].中国科学(G辑),2007,37(1):9-16. 被引量:5
  • 4Corbett C. Battaile The Kinetic Monte Carlo method: Foundation, Implementation,and Application[ J]. Comput. Methods Appl. Mech. Engrg. , 2008,1973 : 386 -3398.
  • 5Huang J Q, Gang S H, Gerassimos Orkoulas, et al. Dependence of Film Surface Roughness and Slope on Surface Migration and Lattice Size in Thin Film Deposition Processes [ J ]. Chemical Engineering Science, 2010,65:6101-6111.
  • 6Chen Z Y, Zhu Y, Chen S H, et al The Kinetic Process of Non-smooth Substrate Thin Film Growth Via Parallel Monte Carlo Method[J]. Applied Surface Science ,2011257:6102-6106.
  • 7李言荣,杨春.薄膜生长与原子尺度的计算机模拟[J].重庆师范学院学报(自然科学版),2002,19(3):1-6. 被引量:3
  • 8Blank D H A, Rijnders G J H M, Koster G, et al. A New Approach in Layer-by-layer Growth of Oxide Materials by Pulsed Laser Deposition [ J ]. Journal of Electroceramics, 2000, (4) :311-318.
  • 9陶杰.材料科学基础[M].北京:化学工业出版,2005.

二级参考文献50

  • 1王兵,吴自勤.超薄金属膜生长研究新进展[J].物理,1996,25(12):724-729. 被引量:8
  • 2金原粲 藤原英夫.薄膜[M].北京:电子工业出版社,1988.130.
  • 3金家俊.分子化学反应动态学[M].上海:上海交通大学出版社,1988..
  • 4张立德 牟季美.纳米材料与纳米结构[M].北京:科学出版社,2001..
  • 5Seizo Kato,Hu Hangxiang. Molecular dynamics simulation of the thin film fabrication process. Surf Sci, 1996,357:891
  • 6Dong Liang, Richard W Simth, David J Srolovitz. A twodimensional molecular dynamics simulation of thin film growth by oblique deposition. J Appl Phys, 1996,80 (10):5682
  • 7Qi Lifeng,et al. Effect of surface reactivity on the nucleation of hydrocarbon thin films through molecular-cluster beam deposition. Surf Sci, 1999, 426: 83
  • 8Ozawa S,Sasajima Y,Heermann D W. Monte Carlo simulations of thin growth. Thin Solid Films, 1996,272:172
  • 9Klavs F Jensen, Seth T Rodgers, Rajesh Venkataramani.Multiscale modeling of thin film growth. Solid State & Mater Sci, 1998,3:562
  • 10Jacob W. Surface reactions during growth and erosion of hydrocarbon films. Thin Solid Films, 1998,326:1

共引文献11

同被引文献76

  • 1郑小平,张佩峰,刘军,贺德衍,马健泰.薄膜外延生长的计算机模拟[J].物理学报,2004,53(8):2687-2693. 被引量:14
  • 2郑小平,张佩峰,范多旺,贺德衍.薄膜生长的计算机模拟[J].材料研究学报,2005,19(2):170-178. 被引量:7
  • 3陆杭军,吴锋民.非均匀基底上三维薄膜生长的模拟研究[J].物理学报,2006,55(1):424-429. 被引量:11
  • 4李佳阳,李融武,孙俊东,刘绍军.异质扩散过程中ES势垒的计算[J].物理学报,2007,56(1):446-451. 被引量:7
  • 5Meng Q D, Zhang X Q, Li F,et al. An Impedance Matched Phase Shifter Using BaSrTi03 Thin Film[ J]. IEEE Microwave and WireUssCompenents IeWers,2006,16(6) *345-347.
  • 6Wang D Y,Wang J, Chan H L W, et al. Structural and Electro-optic Properties of Bao 7Sr0 3Ti03 TTiin Filins Grown on Various Substrata UsingPulsed Laser Deposition [ J]. Journal of Allied Physics,2007,101 :043515-043517.
  • 7Dawle J T, Clem P G. Dielectric Properties of Randmn and (100) Oriented SrTi03 and (Ba, Sr)Ti03 Thin Films Fabricated on( 100) NickelTapes[ J]. Applied Physics LeUm,2002,81 (16) :30游-3030.
  • 8Yamada T,Muralt P, Sherman V 0,et al. Epitaxial Growth of Bao 3 Sr0 7Ti03 Thin Films on A1203 (0001 ) Using Ultrathin TiN Layer asSacrificial Template [ J] . Applied Physics Letters,2007,90:142911.
  • 9Horwitz J S,Chang W,Kim W, et al. The Effect of Stress on the Microwave Dielectric Properties of Bao 5Sr0 5Ti03 Thin Films[ J]. Journal ofElectroceramics,2000,4 : 357-363.
  • 10Fang T H, Chang W J, Lin CM,et al. Effect of Annealing on the Structural and Mechanical Properties of Bao 7Sr0 3Ti03 Thin Films [ J].Materials Science and Engineering A ,2006,426 : 157-161.

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