硼掺杂对热丝CVD法制备纳米晶硅薄膜微结构与光电性能的影响

Growth and Characterization of B-Doped Si Films by Hot-Wire Chemical Vapor Deposition

采用热丝化学气相沉积法制备了不同B2H6掺杂比例（B2H6/SiH4为2%-15%）的p型纳米晶硅薄膜,通过探索B2H6掺杂比例、晶化率、光学带隙和电学性能（电导率、载流子浓度、霍尔迁移率）之间的关系以及薄膜掺杂机理来研究B2H6掺杂比例对薄膜微结构和光电性能的影响。在掺杂比例为11%时成功获得了电导率为32 S/cm的高电导率硼掺杂nc-Si∶H薄膜。

The boron-doped,hydrogenated,nano-crystalline silicon （nc-Si：H） films were grown by hot-wire chemical vapor deposition on glass substrate. The influencing growth factors,such as the ratio of gas flow rates （B2H6/SiH4）, pressure, substrate and tantalum filament temperatures, were studied. The microstructures and photoelectric properties, including the optical band-gap, conductivity, cartier concentration and hall mobility, were characterized with Raman spectroscopy. The results show that the ratio of gas flow rates strongly affects the microstructures and photo-electric properties of the p-type, nc-Si： H films. For example, grown at an optimized ratio of 11%, the conductivity of the film was found to be up to 32 S/cm. The possible mechanisms were also tentatively discussed.