薄膜太阳电池系列讲座(13) 硅基薄膜太阳电池(五)

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摘要上述光诱导的衰退经过150℃、几个小时或250℃、几分钟的热退火处理，对新产生的悬挂键进行钝化后，又会回到其起始值。退火后的状态称为“退火（annealing）”态。退火态类似于刚沉积的材料，即未经受“光诱导蜕化”前所处的状态。

作者张晓丹赵颖熊绍珍

出处《太阳能》 2012年第11期11-14,共4页 Solar Energy

关键词薄膜太阳电池热退火处理硅基光诱导悬挂键起始值退火态状态

参考文献9

1Flowers B H,Mendoza E. Properties of matter[M].Chichester:Wiley,1970.
2Staebler D E,Wroski C R. Reversible conductivity changes in discharge produced amorphous Si[J].Applied Physics Letters,1977,(04):292-294.doi:10.1063/1.89674.
3Stutzmann M,Jackson W B,Tsai C C. Kinetics of the StaeblerWronski effect in hydrogenated amorphous silicon[J].Applied Physics Letters,1984,(10):1075-1077.doi:10.1063/1.95020.
4Adler D. Deflects in amorphous chalcogenides and silicon[J].Journal De Physique Colloque,1981,(10):C4-3-C4-14.doi:10.1007/s00231-011-0763-2.
5Branz H M. Hydrogen collision model of light-induced metastability in hydrogenated amorphous silicon[J].Solid State Communications,1998,(06):387-391.doi:10.1016/S0038-1098(97)10142-9.
6Smets A H M,van de Sanden M C M. Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment[J].Physical Review B,2007,(07):1-4.doi:10.1103/PhysRevB.76.073202.
7Street R A. Hydrogenated amorphous silicon[M].Cambridge:Cambridge University Press,1991.
8Tauc J,Grigorovici R,Vancu A. Optical properties and clectronic structure of amorphous germanium[J].Physical Status Solidi B,1966,(02):627-637.doi:10.1002/pssb.19660150224.
9Millman J,Taub H. Pule digitor and switching waveforms[M].Mcgraw-Hill College,1965.

太阳能

2012年第11期

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