摘要
It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interac- tion combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized （hydro- genated or fluorinated） graphene using electron-beam lithography. We also propose that parallelizing a couple of graphene nanostripes in a transistor should be preferred for practical application, which is also very useful for transistors based on graphene nanoribbon.
It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interac- tion combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized （hydro- genated or fluorinated） graphene using electron-beam lithography. We also propose that parallelizing a couple of graphene nanostripes in a transistor should be preferred for practical application, which is also very useful for transistors based on graphene nanoribbon.
