摘要
硅基光电集成技术是当代高速信息化的重要发展方向之一。为了研究制备在硅衬底上的新型发光材料,突破Nd∶YAG固体激光工作物质主要是晶体、透明陶瓷等固体形态的限制,采用电子束蒸发沉积工艺,在硅(100)衬底上制备了Nd∶YAG薄膜,并对Nd∶YAG薄膜的表面形貌、晶体结构、光学特性进行了测试。X射线和扫描电子显微镜测试结果显示,Nd∶YAG薄膜经1100℃真空高温退火处理1h后有效结晶,采用钛蓝宝石激光器输出808nm激光激发,液氮冷却的InGaAs阵列探测器室温下得到Nd∶YAG薄膜的1064nm主荧光峰的荧光光谱。结果表明,采用电子束蒸发沉积和后续高温退火工艺可以在硅衬底上制备Nd∶YAG晶体薄膜。
Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information. New Si-based luminescent materials were developed to break the limits of Nd：YAG solid laser material, which was confined by two main solid states： single crystal and transparent ceramics. Nd：YAG thin film was prepared on Si （100） substrates by electron beam evaporation deposition. The surface morphology, crystalline phase and optical properties of Nd：YAG thin film were characterized by X-ray diffraction, scanning electron microscopy and spectrophotometer. The crystallization of Nd：YAG thin film was improved after annealing at 1100℃ for l h in the vacuum, photolumineseent spectra of Nd：YAG thin film were measured at room temperature, with 808nm radiation from a Ti： sapphire laser, and photolumineseent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array. The results showed that Nd： YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.
出处
《激光技术》
CAS
CSCD
北大核心
2012年第4期450-452,共3页
Laser Technology
基金
2009年广州市科学技术局应用基础研究计划资助项目(2009J1-C411)
