摘要
基于快速热处理技术,对快速退火炉的特点进行了阐述,介绍了快速退火炉的腔室结构,从综合分析设备的基础上阐述了影响工艺质量的主要因素。加热灯使用寿命会影响腔室的温度均匀性,更换加热灯和调整各灯组的功率因子可以提高温度均匀性。保护气体流量对晶片的边缘效应会导致晶片受热不均匀进而影响到工艺的均匀性,调整保护气体流量也是保证工艺质量的关键。金属腔体的洁净度会影响到热辐射的均匀性和升温速率,必须定期清理。石英腔体的洁净程度会影响到温度测量的精度,应定期清理腔体并进行温度校正。
Based on the rapid thermal processing (RTP) technology, the characteristics of RTP were discussed, and the chamber structure of the RTP was introduced. From the comprehensive analysis on the basis of the equipment, the main factors affecting on the quality of the process were introduced. The life of the heating lamps can affect the temperature uniformity of the chamber, the temperature uniformity can be improved through the replacement of the heating lamps and adjusting the power factor of each set of lamps. The protection of the gas flow on the effect of the wafer's edge will lead to uneven wafer heating thereby affecting the uniformity of the process, and adjusting the protection of the gas flow was the key to guarantee the quality of process. The cleanliness of the metal cavity will affect the uniformity and heating rate of the thermal radiation, Therefore, the metal cavity must be cleaned regularly. The cleanliness of the quartz chamber will affect the accuracy of temperature measurement, the cavity should be cleaned regularly and the temperature should be corrected.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第7期528-530,561,共4页
Semiconductor Technology
关键词
快速退火
加热灯
温度测量
红外辐射
均匀性
rapid-annealing
heating lamps
temperature measurement
infrared radiation
uniformity