摘要
本文研究了应用新型的超高真空等离子增强化学气相沉积 (VHV- PECVD)复合腔系统沉积a- Si1-XCX∶ HK薄膜及其特性。系统的真空度可达 10 -7Pa(10 -9Torr)以上。通过控制 H2 对常规用混合气体(Si H4 +CH4 )的稀释程度以及相应的 CH4 比例 ,优化沉积工艺参数 ,制备出能带宽度范围变化较大的高质量非晶氢化硅碳 (a- Si1-XCX∶ HK)薄膜。通过 RBS、ERDA、IR和 Ramam光谱等方法分析和确定这种薄膜材料的基本特性。对 H2 氢稀释作用及其效应进行了分析。
a-Si1-XCX∶ HK films have been deposited by controlling H2 diluted and a ratio of CH4 in Si H4 +CH4 gas mixture with a new designed ultra high vacuum PECVD multicabinet system.With deposition conditions optimized the high quality amorphous silicon carbon films,having energy gap in wide band,have been obtained.The effect of H2 diluted has been investigated.A detailed analysis of properties of a- Si1-XCX∶ HK films has been carried out by RBS、ERDA、PDS、IR and Ramman spectroscopies.
出处
《真空》
CAS
北大核心
2000年第3期10-17,共8页
Vacuum
关键词
超高真空
PECVD
光电特性
ultra high vacuum
plasma enhanced chemical vapor deposition
amorphous silicon carbon films
H2 diluted
