六角晶格多孔Si纳米阵列的制备研究

Synthesis of Nanoporous Array with Hexagonal Lattice Geometry on Silicon Substrate

采用AAO模板7LAr＋磨技术在Si基片上合成了大面积规则的六角纳米孔阵列，阵列六角晶格尺寸及纳米孔深度可由H3PO4扩孔时间、氧化电压、离子磨时间等工艺参数精确控制。孔间距、孔直径与工艺参数的关系为ID=15．8＋2．17V和蹄0．905V＋0．452TH-20，其中V为氧化电压，TH为H3PO4扩孔时间；孔深度则可被控制为：Y=27．59T-5．44X＋21．76，X为AAO模板长径比，T为离子磨时间。该制备方法将可广泛应用于高效荧光发光器件、太阳能光伏器件、气体传感器件和THz受激辐射等光电子器件。

The synthesis of large-scale nanopore array on Si substrate has been demonstrated using the combination of AAO mask and Ar Ion Milling technique. The geometry of hexagonal nanopore array on Si surface and the depth of the channel embedded in Si can be precisely controlled by the process parameters, where the relationships of interpore-dis- tance and pore diameter with process parameters are：ID=15.8＋2.17V and Po--0.905V＋0.452T.-20, where, V is the an- odization voltage and TH is the H3PO4 etching time. The controlling parameters of pore depth can be described as： Y= 27.59T-5.44X＋21.76 , where, X is the aspect ratio of AAO template and T is the ion milling time. The present nanoporous Si array would be widely used in high luminescence efficiency optoelectronic devices, solar cell devices, chemical gas sensors and THz emission sources.