(100)取向AlN薄膜的制备及其压电性能研究

Preparation and piezoelectric properties of(100) oriented AlN film

采用射频磁控溅射法,在Si(100)衬底(含Au导电层)上制备了(100)取向的AlN薄膜并研究了工作压强和溅射功率对制备的AlN薄膜性能的影响。利用X射线衍射仪(XRD)分析了薄膜结构特性,结果表明,在一定范围内,工作压强的增加和溅射功率的减小更有利于AlN(100)晶面择优取向的生长。利用压电力显微镜(PFM)对AlN薄膜的形貌和压电性能进行了表征,发现(100)择优取向的AlN薄膜的压电性主要表现在薄膜面内方向上。

AlN thin films with （100） preferential orientation were prepared on Si（100） substrates （including Au conductive layer） by radio frequency （RF） magnetron sputtering technique. The effects of gas pressure and sputtering power on the preparation of the （100） oriented AlN film are studied. The structure properties of the film are analyzed by X-ray diffraction （XRD）. And the results show that the （100） oriented AIN film is easily formed at higher gas pressure and lower sputtering power. The surface topography and piezoelectric properties of the film are characterized by piezoresponse force microscopy （PFM）. It is found that the piezoelectric properties of the （100） oriented AlN film are mainly observed in the direction parallel to the surface of the film.