CaF_2掺杂对α-BZN陶瓷结构与介电性能的影响

The Influence of CaF_2 Doping on Microstructure and Dielectric Properties of α-BZN Ceramics

采用固相反应法制备Bi1.5-xCaxZnNb1.5O7-yFy(0.00≤x≤0.20,以下简称BZN-x)陶瓷样品,研究了Ca2+、F-共掺杂对BZN-x陶瓷烧结特性、微观结构和介电性能的影响。结果表明:BZN-x陶瓷样品的最佳烧结温度为1 020℃,CaF2在α-BZN中的固溶度是0.05,伴随着CaF2掺杂量的增加,介电常数逐渐减小,而介电损耗先减小然后又微弱增加(测试频率为1 MHz时)。通过介电损耗、电阻率的变化确认了CaF2掺入α-BZN后的缺陷补偿方式,同时也证实随着掺杂量的增加,介电常数峰值温度向低温移动与缺陷补偿方式有关。

Bi1.5-x CazZnNb1. 5O7-yFy （0.00 ≤x ≤0. 20, abbreviated as BZN- x） ceramics was prepared by conventional solid-state reaction method. The influence of Ca^2＋ and F- co-doping on sintering characteristics, microstructure and dielectric properties of BZN - x ceramics were investigated. The results revealed that the best sintering temperature for BZN - x ceramics was 1020℃, and a solid solution occurred until x = 0. 05. With further increase in the content of CaF2, the dielectric constant decreased, while the dielectric loss first decreased then increased slightly （ （at 1MHz）. The way of defect compensation was confirmed by the varieties in dielectric loss and resistivity. With increase in CaF2 concentration, the shift of the dielectric constant peak to low temperature was associated with the way of the defect compensation.